Without applying any voltageforward or reverse across its terminals are said to be in equilibrium modezero bias mode. Under the unbiased condition the diode consists of both p type and n type semiconductor material and the process of diffusion takes place.
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However the potential barrier helps minority carriers few free electrons in the p region and few holes in the n region to drift across the junction.
Pn junction diode zero bias. Zero biased condition in p n junction diode zero bias is the condition of the diode without any external supply. If the impurities added to p type and n type semiconductor materials are not uniform then at one region large number of charge carriers are present while at another region small number of charge carriers are present. As there is no external power supply to the diode the electrons diffuse towards p side and the diffusion of holes is towards n side resulting in the generation of the electric field because of these charge carriers diffusion.
In n type semiconductor materials pentavalent impurities are added while in p type semiconductor materials trivalent impurities are added. Zero biased pn junction diode the potential barrier that now exists discourages the diffusion of any more majority carriers across the junction. Zero bias p n junction.
Zero biased pn junction diode in the zero bias junction potentially provides higher potential energy to the holes on the p and n side terminals. Zero biased pn junction diode is a diode without any bias mode. When the terminals of the junction diode are shorted few majority charge carriers in the p side with plenty of energy to overcome the potential barrier to travel across the depletion region.
Diode without any connection or diode in connected mode but not supplied any voltage. P n junction diode under zero bias condition zero bias is the condition of thermal equilibrium where the number of charge carriers on both the ends is balanced.
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